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| SLD-68HL1 Planar Photodiode Features * * * * * * Low capacitance Fast switching time Low leakage current Linear response vs irradiance Hermetic TO-46 package with high dome lens Multiple dark current ranges available 1.0 5.1 0.50-0.52 4.7 o 5.3 CATHODE (Common to case) 2.5 Description This small area planar, passivated silicon photodetector is designed to operate in either photovoltaic or reverse bias mode. It provides excellent linearity in output signal versus irradiance. This is an ideal detector for fast rise time applications. Absolute Maximum Ratings Storage Temperature Operating Temperature Soldering Temperature (1) -40C to +125C -40C to +125C 260C 60 25.4 Min. Chip Size = 1.7 mm X 1.7 mm Active Area = 2.0 sq.mm. Anode 45 Dimensions in mm. (+/- 0.13) Directional Sensitivity Characteristics 40 50 0.8 0.6 0.4 0.2 0.0 30 20 10 1.0 Half Angle = 15 70 Notes: (1) >2 mm from case for <5 sec. (2) Ee = source @ 2854 K (3) Ee = source @ = 880 nm 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Electrical Characteristics (TA=25C unless otherwise noted) Symbol Parameter MIN TYP ISC Short Circuit Current 50 70 VOC Open Circuit Voltage 0.40 ID Reverse Dark Current SLD-68HL1A SLD-68HL1B SLD-68HL1C SLD-68HL1D SLD-68HL1E CJ Junction Capacitance 40 tR Rise Time 1.0 tF Fall Time 1.5 TCI Temp. Coef. +0.2 VBR Reverse Breakdown Voltage 50 Maximum Sensitivity Wavelength 930 P Sensitivity Spectral Range 400 R Acceptance Half Angle 15 1/2 Specifications subject to change without notice MAX UNITS TEST CONDITIONS 2 VR=0V, Ee=5mW/cm (2) A 2 V Ee=5mW/cm (2) nA nA nA nA pA pF s s %/C V nm nm deg VR=100mV, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=0, Ee=0, f=1MHz VR=10V, RL=1k (3) VR=10V, RL=1k (3) (2) IR=100A 100 100 10 1 250 1100 (off center-line) 101987 REV 2 5200 St. Patrick St., Montreal Que., H4E 4N9, Canada Tel: 514-768-8000 Fax: 514-768-8889 QF-84 The Old Railway, Princes Street Ulverston, Cumbria, LA12 7NQ, UK Tel: 01 229 581 551 Fax: 01 229 581 554 |
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